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TK5A55D Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TK5A55D Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TK5A55D 2010-08-27 4 1 0.1 10 100 1000 10000 1 10 100 Ciss Coss Crss 0 0.1 −0.3 1 100 −0.6 −0.9 VGS = 0 V 10 3 1 5 −1.2 −1.5 10 160 −40 0 40 80 120 −80 5 3 2 1 0 ID = 1.3 A 2.5 5 4 0 4 8 VDD = 100 V VDS VGS 400 200 12 16 500 400 300 200 100 0 20 16 12 8 4 0 20 50 0 0 40 80 120 160 20 30 40 10 0 1 2 3 5 −80 −40 0 40 80 120 160 4 Vth − Tc RDS (ON) − Tc IDR − VDS PD − Tc Common source Tc = 25°C Pulse Test Common source VGS = 0 V f =1MHz Tc = 25°C Common source VDS = 10 V ID = 1mA Pulse Test Case temperature Tc (°C) Case temperature Tc (°C) Total gate charge Qg (nC) Capacitance – VDS Drain-source voltage VDS (V) Case temperature Tc (°C) Drain-source voltage VDS (V) Dynamic input / output characteristics Common source ID = 5 A Tc = 25°C Pulse Test Common source VGS = 10 V Pulse Test |
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