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MGW20N60D Datasheet(PDF) 5 Page - Motorola, Inc

Part # MGW20N60D
Description  Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MGW20N60D Datasheet(HTML) 5 Page - Motorola, Inc

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MGW20N60D
5
Motorola TMOS Power MOSFET Transistor Device Data
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
Figure 11. Turn–Off Losses versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
2
1
0.5
0
75
25
0
100
Figure 12. Turn–Off Losses versus
Collector–to–Emitter Current
VCC = 360 V
VGE = 15 V
RG = 20 Ω
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
1.2
0.4
0
20
10
5
0
15
VCC = 360 V
VGE = 15 V
RG = 20 Ω
TJ = 125°C
Figure 13. Typical Diode Forward Drop versus
Instantaneous Forward Current
VFM, FORWARD VOLTAGE DROP (VOLTS)
100
0.1
2
0.4
0
10
1
1.2
Figure 14. Reverse Biased Safe
Operating Area
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
100
10
0.1
1000
1
1
50
125
150
IC = 20 A
TJ = 125°C
TJ = 25°C
100
10
0.8
1.5
15 A
10 A
0.8
1.6


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