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AOC2411 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOC2411 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 4 page  AOC2411 Symbol Min Typ Max Units BVDSS -30 V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -0.6 -1 -1.4 V 37 45 TJ=125°C 52 63 45 60 gFS 7.5 S VFSD -0.7 -1 V Ciss 1253 1630 pF Coss 167 220 pF Crss 105 150 pF Rg 16.7 34 Ω Qg 12.5 20 nC Qgs 2 nC Qgd 3.2 nC tD(on) 14 25 tr 12 20 tD(off) 150 225 tf 72 110 trr 14.5 30 ns Note 1: Guaranteed by design ns Body Diode Reverse Recovery Time IF=-1A, dI/dt=100A/µs VGS=-4.5V, VDS=-10V, ID=-1A Total Gate Charge Gate Source Charge Gate Drain Charge VGS=-4.5V, VDS=-10V, RL=10Ω, ID=1A, RGEN=6Ω Turn-Off Fall Time Parameter Conditions VGS=-4.5V, ID=-1A Static Source to Source On-Resistance Gate Threshold Voltage VGS=-2.5V, ID=-1A STATIC PARAMETERS ID=-1A,VGS=0V, VDS=-5V, ID=-1A DYNAMIC PARAMETERS Note1 Diode Forward Voltage m Ω VGS=0V, VDS=-15V, f=1MHz, Electrical Characteristics (TJ=25°C unless otherwise noted) SWITCHING PARAMETERS Note1 VGS=0V, VDS=0V, f=1MHz Zero Gate Voltage Source Current Gate leakage current Forward Transconductance RDS(ON) VDS=VGS, ID=-250µA VDS=-30V, VGS=0V VDS=0V, VGS=±12V Source-Source Breakdown Voltage ID=-250µA, VGS=0V IDSS µA Input Capacitance Output Capacitance Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Reverse Transfer Capacitance Gate resistance Rev 1 : August 2012 www.aosmd.com Page 2 of 5 Note 1: Guaranteed by design THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev 1 : August 2012 www.aosmd.com Page 2 of 5 |
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