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TC7S00F Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TC7S00F Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TC7S00F/FU 2009-08-03 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7S00F, TC7S00FU 2-Input NAND Gate Features • High Speed : tpd = 7ns (Typ.) at VCC = 5 V • Low power dissipation : ICC = 1 μA (Max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • Output drive capability : 5 LSTTL Loads • Symmetrical Output Impedance : |IOH| = IOL= 2mA (min) • Balanced propagation delays : tpLH ≒ tpHL • Wide operating voltage range : VCC = 2 to 6 V Marking Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VCC −0.5 to 7.0 V DC input voltage VIN −0.5 to VCC + 0.5 V DC output voltage VOUT −0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT ±12.5 mA DC VCC/ground current ICC ±25 mA Power dissipation PD 200 mW Storage temperature Tstg −65 to 150 °C Lead temperature (10 s) TL 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). TC7S00F (SMV) TC7S00FU (USV) Weight SSOP5-P-0.95 : 0.016 g (Typ.) SSOP5-P-0.65A : 0.006 g (Typ.) Pin Assignment (top view) 5 VCC 4 OUT Y IN A 2 GND 3 IN B 1 Product name E 1 |
Similar Part No. - TC7S00F_09 |
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Similar Description - TC7S00F_09 |
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