SQJ970EP

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Vishay Siliconix

S11-2419-Rev. C, 19-Dec-11

2

Document Number: 65282

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

40

-

-

V

Gate-Source Threshold Voltage

1.5

2.0

2.5

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

1

μA

-

-

50

-

-

150

≥ 5 V

30

-

-

A

-

0.016

0.020

Ω

-

0.022

0.028

-

0.025

0.031

-

0.029

0.036

-

28

-

S

Input Capacitance

-

1730

2165

pF

Output Capacitance

-

260

325

Reverse Transfer Capacitance

-

130

165

-34

55

nC

-5.2

-

-6.5

-

Gate Resistance

f = 1 MHz

0.71

3.92

7.12

Ω

Ω

-10

15

ns

-8

12

-50

75

-10

15

--

32

A

Forward Voltage

-

0.8

1.1

V