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T3GE9WBG Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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T3GE9WBG Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 11 page T3GE9WBG 2009-06-15 4 Block Diagram Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit VCCA −0.5 to 3.0 Power supply voltage VBatt 5.5 V DIR, Clk.h −0.5 to VCCA + 0.5 DC input voltage Enable VIN −0.5 to 5.5 V VI/OA −0.5 to VCCA + 0.5 (Note 2) DC bus I/O voltage VI/OB −0.5 to VCCB + 0.5 (Note 2) V DIR, Clk.h ±25 Input diode current Enable IIK −25 mA Output diode current II/OK ±25 (Note 3) mA IOUTA ±25 DC output current IOUTB ±25 mA DC VCC/ground current per supply pin ICCA ±50 mA Power dissipation PD 400 mW Storage temperature Tstg −55 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Note 2: High or Low stats. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND, VOUT > VCC Symbol Value (typ) R3, R4 70kΩ R2 15kΩ R5 470kΩ R6, R7 100kΩ R8 5Ω R9 35Ω C 35pF VCCA CD VCCA WP R6 R7 LDO VBatt VCCB O/P Enable |
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