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NCV7356D1R2G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCV7356D1R2G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 24 page NCV7356 http://onsemi.com 5 Electrical Specification All voltages are referenced to ground (GND). Positive currents flow into the IC. The maximum ratings given in the table below are limiting values that do not lead to a permanent damage of the device but exceeding any of these limits may do so. Long term exposure to limiting values may affect the reliability of the device. MAXIMUM RATINGS Rating Symbol Condition Min Max Unit Supply Voltage, Normal Operation VBAT − −0.3 18 V Short−Term Supply Voltage, Transient VBAT.LD Load Dump; t < 500 ms − 40 V (peak) Jump Start; t < 1.0 min − 27 V Transient Supply Voltage VBAT.TR1 ISO 7637/1 Pulse 1 (Note 2) −50 − V Transient Supply Voltage VBAT.TR2 ISO 7637/1 Pulses 2 (Note 2) − 100 V Transient Supply Voltage VBAT.TR3 ISO 7637/1 Pulses 3A, 3B −200 200 V CANH Voltage VCANH VBAT < 27 V −20 40 V VBAT = 0 V −40 Transient Bus Voltage VCANHTR1 ISO 7637/1 Pulse 1 (Note 3) −50 − V Transient Bus Voltage VCANHTR2 ISO 7637/1 Pulses 2 (Note 3) − 100 V Transient Bus Voltage VCANHTR3 ISO 7637/1 Pulses 3A, 3B (Note 3) −200 200 V DC Voltage on Pin LOAD VLOAD Via RT > 2.0 kW −40 40 V DC Voltage on Pins TxD, MODE1, MODE0, RxD VDC − −0.3 7.0 V ESD Capability of CANH VESDBUS Human Body Model (with respect to VBAT and GND) Eq. to Discharge 100 pF with 1.5 kW −4000 4000 V ESD Capability of Any Other Pin VESD Human Body Model Eq. to Discharge 100 pF with 1.5 kW −2000 2000 V Maximum Latchup Free Current at Any Pin ILATCH − −500 500 mA Storage Temperature TSTG − −55 150 °C Junction Temperature TJ − −40 150 °C Lead Temperature Soldering Reflow: (SMD styles only) SOIC−14 Tsld 60 s − 150 s above 183°C − 240 peak °C SOIC−8 60 s − 150 s above 217°C − 260 peak Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. ISO 7637 test pulses are applied to VBAT via a reverse polarity diode and >1.0 mF blocking capacitor. 3. ISO 7637 test pulses are applied to CANH via a coupling capacitance of 1.0 nF. 4. ESD measured per Q100−002 (EIA/JESD22−A114−A). TYPICAL THERMAL CHARACTERISTICS Parameter Test Condition, Typical Value Unit Min Pad Board 1, Pad Board SOIC−8 Junction−to−Lead (psi−JL7, YJL8) or Pins 6−7 57 (Note 5) 51 (Note 6) °C/W Junction−to−Ambient (RqJA, qJA) 187 (Note 5) 128 (Note 6) °C/W SOIC−14 Junction−to−Lead (psi−JL8, YJL8) 30 (Note 7) 30 (Note 8) °C/W Junction−to−Ambient (RqJA, qJA) 122 (Note 7) 84 (Note 8) °C/W 5. 1 oz copper, 53 mm2 coper area, 0.062″ thick FR4. 6. 1 oz copper, 716 mm2 coper area, 0.062″ thick FR4. 7. 1 oz copper, 94 mm2 coper area, 0.062″ thick FR4. 8. 1 oz copper, 767 mm2 coper area, 0.062″ thick FR4. |
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