© Semiconductor Components Industries, LLC, 2012

July, 2012 − Rev. 10

1

Publication Order Number:

M1MA151WAT1/D

M1MA151WAT1,

M1MA152WAT1

Preferred Device

Common Anode Silicon

Dual Switching Diodes

These Common Anode Silicon Epitaxial Planar Dual Diodes are

designed for use in ultra high speed switching applications. These

devices are housed in the SC−59 package which is designed for low

power surface mount applications.

Features

Rating

Symbol

Value

Unit

Reverse Voltage

M1MA151WAT1

M1MA152WAT1

40

80

Vdc

Peak Reverse Voltage

M1MA151WAT1

M1MA152WAT1

40

80

Vdc

Forward Current

Single

Dual

100

150

mAdc

Peak Forward Current

Single

Dual

225

340

mAdc

Peak Forward Surge Current

Single

Dual

(Note 1)

500

750

mAdc

THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

−55 to + 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. t = 1 SEC

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

SC−59

CASE 318D

MARKING DIAGRAM

3 ANODE

12

CATHODE

Device

Package

ORDERING INFORMATION

M1MA151WAT1

SC−59

3000/Tape & Reel

M1MA151WAT1G

SC−59

(Pb−Free)

3000/Tape & Reel

M1MA152WAT1

SC−59

3000/Tape & Reel

M1MA152WAT1G

SC−59

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

Mx M G

G

Mx = Device Code

x = N for 151

O for 152

M

= Date Code*

G

=Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.