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MC74VHCT126ADR2G Datasheet(PDF) 3 Page - ON Semiconductor

Part # MC74VHCT126ADR2G
Description  Quad Bus Buffer with 3?뭆tate Control Inputs
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74VHCT126ADR2G Datasheet(HTML) 3 Page - ON Semiconductor

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MC74VHCT126A
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Parameter
Test Conditions
Symbol
VCC
(V)
TA = 25°C
TA ≤ 85°C
TA ≤ 125°C
Unit
Min
Typ
Max
Min
Max
Min
Max
Minimum High−Level Input
Voltage
VIH
3.0
4.5
5.5
1.2
2.0
2.0
1.2
2.0
2.0
1.2
2.0
2.0
V
Maximum Low−Level Input
Voltage
VIL
3.0
4.5
5.5
0.53
0.8
0.8
0.53
0.8
0.8
0.53
0.8
0.8
V
Minimum High−Level Output
Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOH = − 50 mA
VOH
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
V
VIN = VIH or VIL
IOH = − 4.0 mA
IOH = − 8.0 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
Maximum Low−Level Output
Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 50 mA
VOL
3.0
4.5
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
V
VIN = VIH or VIL
IOL = 4.0 mA
IOL = 8.0 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
Maximum Input Leakage Current
VIN = 5.5 V or GND
IIN
0 to 5.5
± 0.1
± 1.0
± 1.0
mA
Maximum Quiescent Supply
Current
VIN = VCC or GND
ICC
5.5
2.0
20
40
mA
Quiescent Supply Current
Input: VIN = 3.4 V
ICCT
5.5
1.35
1.50
1.65
mA
Maximum 3−State Leakage
Current
VIN = VIH or VI
VOUT = VCC or GND
IOZ
5.5
±0.2
5
±2.5
±2.5
mA
Output Leakage Current
VOUT = 5.5 V
IOPD
0.0
0.5
5.0
10
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Parameter
Test Conditions
Symbol
TA = 25°C
TA = ≤ 85°C
TA ≤ 125°C
Unit
Min
Typ
Max
Min
Max
Min
Max
Maximum Propagation Delay,
A to Y
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
tPLH,
tPHL
5.6
8.1
8.0
11.5
1.0
1.0
9.5
13.0
12.0
16.0
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
8.5
10.5
Maximum Output Enable
TIme,OE to Y
VCC = 3.3 ± 0.3 V CL = 15 pF
RL = 1.0 kW
CL = 50 pF
tPZL,
tPZH
5.4
7.9
8.0
11.5
1.0
1.0
9.5
13.0
11.5
15.0
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1.0 kW
CL = 50 pF
3.6
5.1
5.1
7.1
1.0
1.0
6.0
8.0
7.5
9.5
Maximum Output
Disable Time,OE to Y
VCC = 3.3 ± 0.3 V CL = 50 pF
RL = 1.0 kW
tPLZ,
tPHZ
9.5
13.2
1.0
15.0
18.0
ns
VCC = 5.0 ± 0.5 V CL = 50 pF
RL = 1.0 kW
6.1
8.8
1.0
10.0
12.0
Output−to−Output Skew
VCC = 3.3 ± 0.3 V CL = 50 pF
(Note 1)
tOSLH,
tOSHL
1.5
1.5
2.0
ns
VCC = 5.0 ± 0.5 V CL = 50 pF
(Note 1)
1.0
1.0
1.5
Maximum Input Capacitance
Cin
4
10
10
10
pF
Maximum Three−State Output
Capacitance (Output in High
Impedance State)
Cout
6
pF
Power Dissipation Capacitance (Note 2)
CPD
Typical @ 25°C, VCC = 5.0V
pF
15
1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC/4 (per buffer). CPD is used to determine the
no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.


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