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MC74VHC244DWR2G Datasheet(PDF) 3 Page - ON Semiconductor |
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MC74VHC244DWR2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page MC74VHC244 http://onsemi.com 3 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 2.0 5.5 V VIN DC Input Voltage 0 5.5 V VOUT DC Output Voltage 0 VCC V TA Operating Temperature Range, all Package Types −55 125 °C tr, tf Input Rise or Fall Time VCC = 3.3 V + 0.3 V VCC = 5.0 V + 0.5 V 0 100 20 ns/V DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES Junction Temperature °C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 1 1 10 100 1000 TIME, YEARS FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR Figure 2. Failure Rate vs. Time Junction Temperature DC CHARACTERISTICS (Voltages Referenced to GND) VCC TA = 25°C TA ≤ 85°C −55°C ≤ TA ≤ 125°C Symbol Parameter Condition (V) Min Typ Max Min Max Min Max Unit VIH Minimum High−Level Input Voltage 2.0 3.0 to 5.5 1.5 VCCX 0.7 1.5 VCCX 0.7 1.5 VCCX 0.7 1.5 VCCX 0.7 V VIL Maximum Low−Level Input Voltage 2.0 3.0 to 5.5 0.5 VCCX 0.3 0.5 VCCX 0.3 0.5 VCCX 0.3 V VOH Maximum High−Level Output Voltage VIN = VIH or VIL IOH = −50 mA 2.0 3.0 4.5 1.9 2.9 4.4 2.0 3.0 4.5 1.9 2.9 4.4 1.9 2.9 4.4 V VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 2.48 3.8 2.34 3.66 VOL Maximum Low−Level Output Voltage VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V VIN = VIH or VIL IOH = 4 mA IOH = 8 mA 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 IIN Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA IOZ Maximum 3−State Leakage Current VIN = VIH or VIL VOUT = VCC or GND 5.5 ±0.25 ±2.5 ±2.5 mA ICC Maximum Quiescent Supply Current (per package) VIN = VCC or GND 5.5 4.0 40.0 40.0 mA |
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