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M74VHC1G126DTT1G Datasheet(PDF) 3 Page - ON Semiconductor

Part # M74VHC1G126DTT1G
Description  Noninverting 3-State Buffer
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

M74VHC1G126DTT1G Datasheet(HTML) 3 Page - ON Semiconductor

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MC74VHC1G126
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3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
(V)
TA = 25°C
TA ≤ 85°C
−55 ≤ TA ≤ 125°C
Unit
Min
Typ
Max
Min
Max
Min
Max
VIH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
VIL
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
VOH
Minimum High−Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOH = −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
VOL
Maximum Low−Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
IOZ
Maximum 3−State
Leakage Current
VIN = VIH or VIL
VOUT = VCC or GND
5.5
±0.2
5
±2.5
±2.5
mA
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
1.0
20
40
mA
AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
Symbol
Parameter
Test Conditions
TA = 25°C
TA ≤ 85°C
−55 ≤ TA ≤ 125°C
Unit
Min
Typ
Max
Min
Max
Min
Max
tPLH,
tPHL
Maximum Propagation
Delay, Input A to Y
(Figures 3. and 5.)
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
4.5
6.4
8.0
11.5
9.5
13.0
12.0
16.0
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
3.5
4.5
5.5
7.5
6.5
8.5
8.5
10.5
tPZL,
tPZH
Maximum Output Enable
Time, Input OE to Y
(Figures 4. and 5.)
VCC = 3.3 ± 0.3 V CL = 15 pF
RL = 1000 W
CL = 50 pF
4.5
6.4
8.0
11.5
9.5
13.0
11.5
15.0
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1000 W
CL = 50 pF
3.5
4.5
5.1
7.1
6.0
8.0
8.5
10.5
tPLZ,
tPHZ
Maximum Output Disable
Time, Input OE to Y
(Figures 4. and 5.)
VCC = 3.3 ± 0.3 V CL = 15 pF
RL = 1000 W
CL = 50 pF
6.5
8.0
9.7
13.2
11.5
15.0
14.5
18.0
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1000 W
CL = 50 pF
4.8
7.0
6.8
8.8
8.0
10.0
10.0
12.0
CIN
Maximum Input
Capacitance
4.0
10
10
10
pF
COUT
Maximum 3−State Output
Capacitance (Output in
High Impedance State)
6.0
pF
CPD
Power Dissipation Capacitance (Note 5)
Typical @ 25°C, VCC = 5.0 V
pF
8.0
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.


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