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NVB6413AN Datasheet(PDF) 1 Page - ON Semiconductor |
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NVB6413AN Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 3 1 Publication Order Number: NTB6413AN/D NTB6413AN, NTP6413AN, NVB6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage − Continuous VGS $20 V Continuous Drain Current RqJC Steady State TC = 25°C ID 42 A TC = 100°C 28 Power Dissipation RqJC Steady State TC = 25°C PD 136 W Pulsed Drain Current tp = 10 ms IDM 178 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to +175 °C Source Current (Body Diode) IS 42 A Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 36.5 A, L = 0.3 mH, RG = 25 W) EAS 200 mJ Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds TL 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) Steady State RqJC 1.1 °C/W Junction−to−Ambient (Note 1) RqJA 35 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). http://onsemi.com MARKING DIAGRAM & PIN ASSIGNMENT 6413AN = Specific Device Code G = Pb−Free Device A = Assembly Location Y = Year WW = Work Week 1 2 3 4 D2PAK CASE 418B STYLE 2 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION V(BR)DSS RDS(ON) MAX ID MAX (Note 1) 100 V 28 mW @ 10 V 42 A TO−220AB CASE 221A STYLE 5 1 2 3 4 NTP 6413ANG AYWW 1 Gate 3 Source 4 Drain 2 Drain 1 Gate 3 Source 4 Drain 2 Drain NTB 6413ANG AYWW G S D N−Channel |
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