NTB6412AN, NTP6412AN, NVB6412AN

http://onsemi.com

2

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

100

V

Drain−to−Source Breakdown Voltage Temper-

ature Coefficient

103

mV/°C

Zero Gate Voltage Drain Current

1.0

mA

100

Gate−to−Source Leakage Current

$100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

2.0

4.0

V

Negative Threshold Temperature Coefficient

9.2

mV/°C

Drain−to−Source On−Resistance

16.8

18.2

mW

15.6

18.2

Forward Transconductance

31

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

f = 1 MHz

2700

3500

pF

Output Capacitance

400

500

Reverse Transfer Capacitance

150

Total Gate Charge

73

100

nC

Threshold Gate Charge

2.5

Gate−to−Source Charge

13.5

Gate−to−Drain Charge

35

Plateau Voltage

5.6

V

Gate Resistance

2.2

W

Turn−On Delay Time

16

ns

Rise Time

140

Turn−Off Delay Time

70

Fall Time

126

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.96

1.3

V

0.89

Reverse Recovery Time

85

ns

Charge Time

60

Discharge Time

25

Reverse Recovery Charge

270

nC

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.