NTB5860NL, NTP5860NL, NVB5860NL

http://onsemi.com

2

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

6.1

mV/°C

Zero Gate Voltage Drain Current

1.0

mA

100

Gate−Source Leakage Current

$100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

1.0

3.0

V

Threshold Temperature Coefficient

−7.7

mV/°C

Drain−to−Source On−Resistance

2.4

3.0

mW

2.8

3.6

Forward Transconductance

47

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

f = 1 MHz

13216

pF

Output Capacitance

1127

Transfer Capacitance

752

Total Gate Charge

220

nC

Threshold Gate Charge

13

Gate−to−Source Charge

37

Gate−to−Drain Charge

54

Turn−On Delay Time

25

ns

Rise Time

58

Turn−Off Delay Time

98

Fall Time

144

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.76

1.1

0.60

Reverse Recovery Time

50

ns

Charge Time

25

Discharge Time

25

Reverse Recovery Stored Charge

71

nC

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.