TIG067SS

No. A1067-2/9

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=2mA, VGE=0V

400

V

Collector-to-Emitter Cutoff Current

ICES

VCE=320V, VGE=0V

10

μA

Gate-to-Emitter Leakage Current

IGES

VGE=±6V, VCE=0V

±10

μA

Gate-to-Emitter Threshold Voltage

VGE(off)

VCE=10V, IC=1mA

0.4

1.0

V

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=150A, VGE=4V

3.8

5

V

Input Capacitance

Cies

VCE=10V, f=1MHz

5100

pF

Output Capacitance

Coes

59

pF

Reverse Transfer Capacitance

Cres

43

pF

Fall Time

tf

IC=150A, VCC=320V, Resistor load VGE=4V, RG=36Ω

270

ns

Fig1 Large Current R Load Switching Circuit

Note1. Gate Series Resistance RG ≥ 36

Ω is recommended for protection purpose at the time of turn OFF. However,

if dv / dt ≤ 1500 / μs is satisfied at customer’s actual set evaluation, RG < 36

Ω can also be used.

Note2. The collector voltage gradient dv / dt must be smaller than 1500V / μs to protect the device when it is turned off.

Ordering Information

Device

Package

Shipping

memo

TIG067SS-TL-2W

SOIC8

2,500pcs./reel

Pb Free and Halogen Free

100k

Ω

CM

RL

RG

VCC

+

TIG067SS

4V

0V