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NDD03N80Z.1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NDD03N80Z.1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NDD03N80Z, NDF03N80Z http://onsemi.com 2 THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) NDF03N80Z NDD03N80Z RqJC 4.0 1.3 °C/W Junction−to−Ambient Steady State (Note 3) NDF03N80Z (Note 4) NDD03N80Z (Note 3) NDD03N80Z−1 RqJA 50 33 96 3. Insertion mounted 4. Surface mounted on FR4 board using 1” sq. pad size (Cu area = 1.127” sq [2 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS =0V, ID =1mA 800 V Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 1 mA 870 mV/°C Drain−to−Source Leakage Current IDSS VDS = 800 V, VGS =0V TJ =25°C 1.0 mA TJ = 125°C 50 Gate-to-Source Leakage Current IGSS VGS = ±20 V ±10 mA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VDS =VGS, ID =50 mA 3.0 4.1 4.5 V Negative Threshold Temperature Coefficient VGS(TH)/TJ Reference to 25°C, ID = 50 mA 11 mV/°C Static Drain-to-Source On Resistance RDS(ON) VGS =10V, ID = 1.2 A 3.7 4.5 W Forward Transconductance gFS VDS =15V, ID = 1.2 A 2.1 S DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) Ciss VDS =25V, VGS = 0 V, f = 1 MHz 440 pF Output Capacitance (Note 6) Coss 52 Reverse Transfer Capacitance (Note 6) Crss 9.0 Total Gate Charge (Note 6) Qg VDS = 400 V, ID = 3.3 A, VGS =10V 17 nC Gate-to-Source Charge (Note 6) Qgs 3.5 Gate-to-Drain (“Miller”) Charge (Note 6) Qgd 9.1 Plateau Voltage VGP 6.5 V Gate Resistance Rg 5.5 W RESISTIVE SWITCHING CHARACTERISTICS (Note 7) Turn-on Delay Time td(on) VDD = 400 V, ID = 3.3 A, VGS =10V, RG = 0 W 9.0 ns Rise Time tr 7.0 Turn-off Delay Time td(off) 17 Fall Time tf 9.0 SOURCE−DRAIN DIODE CHARACTERISTICS Diode Forward Voltage VSD IS = 3.0 A, VGS =0V TJ =25°C 0.9 1.6 V TJ = 100°C 0.8 Reverse Recovery Time trr VGS =0V, VDD =30V IS = 3.3 A, di/dt = 100 A/ms 360 ns Charge Time ta 81 Discharge Time tb 280 Reverse Recovery Charge Qrr 1.3 nC 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. 6. Guaranteed by design. 7. Switching characteristics are independent of operating junction temperatures. |
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