NDD03N80Z.1G datasheet(2/8 Pages) ONSEMI

Part #	NDD03N80Z.1G

Description	N.Channel Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NDD03N80Z, NDF03N80Z

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THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

NDF03N80Z

NDD03N80Z

RqJC

4.0

1.3

°C/W

Junction−to−Ambient Steady State

(Note 3) NDF03N80Z

(Note 4) NDD03N80Z

(Note 3) NDD03N80Z−1

RqJA

50

33

96

3. Insertion mounted

4. Surface mounted on FR4 board using 1” sq. pad size (Cu area = 1.127” sq [2 oz] including traces).

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS =0V, ID =1mA

800

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

Reference to 25°C, ID = 1 mA

870

mV/°C

Drain−to−Source Leakage Current

IDSS

VDS = 800 V, VGS =0V

TJ =25°C

1.0

mA

TJ = 125°C

50

Gate-to-Source Leakage Current

IGSS

VGS = ±20 V

±10

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =50 mA

3.0

4.1

4.5

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

Reference to 25°C, ID = 50 mA

11

mV/°C

Static Drain-to-Source On Resistance

RDS(ON)

VGS =10V, ID = 1.2 A

3.7

4.5

W

Forward Transconductance

gFS

VDS =15V, ID = 1.2 A

2.1

S

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 6)

Ciss

VDS =25V, VGS = 0 V, f = 1 MHz

440

pF

Output Capacitance (Note 6)

Coss

52

Reverse Transfer Capacitance

(Note 6)

Crss

9.0

Total Gate Charge (Note 6)

Qg

VDS = 400 V, ID = 3.3 A, VGS =10V

17

nC

Gate-to-Source Charge (Note 6)

Qgs

3.5

Gate-to-Drain (“Miller”) Charge

(Note 6)

Qgd

9.1

Plateau Voltage

VGP

6.5

V

Gate Resistance

Rg

5.5

W

RESISTIVE SWITCHING CHARACTERISTICS (Note 7)

Turn-on Delay Time

td(on)

VDD = 400 V, ID = 3.3 A,

VGS =10V, RG = 0 W

9.0

ns

Rise Time

tr

7.0

Turn-off Delay Time

td(off)

17

Fall Time

tf

9.0

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

IS = 3.0 A, VGS =0V

TJ =25°C

0.9

1.6

V

TJ = 100°C

0.8

Reverse Recovery Time

trr

VGS =0V, VDD =30V

IS = 3.3 A, di/dt = 100 A/ms

360

ns

Charge Time

ta

81

Discharge Time

tb

280

Reverse Recovery Charge

Qrr

1.3

nC

5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

6. Guaranteed by design.

7. Switching characteristics are independent of operating junction temperatures.

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