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NCV887100D1R2G Datasheet(PDF) 5 Page - ON Semiconductor

Part # NCV887100D1R2G
Description  Automotive Grade Non-Synchronous Boost Controller
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV887100D1R2G Datasheet(HTML) 5 Page - ON Semiconductor

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NCV8871
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ELECTRICAL CHARACTERISTICS (−40°C < TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Unit
Max
Typ
Min
Conditions
Symbol
CURRENT SENSE AMPLIFIER
Current limit threshold voltage
Vcl
Voltage on ISNS pin
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
360
360
360
180
180
400
400
400
200
200
440
440
440
220
220
mV
Current limit,
Response time
tcl
CL tripped until GDRV falling edge,
VISNS = Vcl + 40 mV
−
80
125
ns
Overcurrent protection,
Threshold voltage
%Vocp
Percent of Vcl
125
150
175
%
Overcurrent protection,
Response Time
tocp
From overcurrent event, Until switching
stops, VISNS = VOCP + 40 mV
−
−
125
ns
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
gm,vea
VFB – Vref = ± 20 mV
0.8
1.2
1.5
mS
VEA output resistance
Ro,vea
2.0
−
−
MW
VFB input bias current
Ivfb,bias
Current out of VFB pin
−
0.5
2.0
mA
Reference voltage
Vref
1.176
1.200
1.224
V
VEA maximum output voltage
Vc,max
2.5
−
−
V
VEA minimum output voltage
Vc,min
−
−
0.3
V
VEA sourcing current
Isrc,vea
VEA output current, Vc = 2.0 V
80
100
−
mA
VEA sinking current
Isnk,vea
VEA output current, Vc = 0.7 V
80
100
−
mA
GATE DRIVER
Sourcing current
Isrc
VDRV ≥ 6 V, VDRV − VGDRV = 2 V
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
600
400
600
400
600
800
575
800
575
800
−
−
−
−
−
mA
Sinking current
Isink
VGDRV ≥ 2 V
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
500
250
500
250
500
600
350
600
350
600
−
−
−
−
−
mA
Driving voltage dropout
Vdrv,do
VIN − VDRV, IvDRV = 25 mA
−
0.3
0.6
V
Driving voltage source current
Idrv
VIN − VDRV = 1 V
35
45
−
mA
Backdrive diode voltage drop
Vd,bd
VDRV − VIN, Id,bd = 5 mA
−
−
0.7
V
Driving voltage
VDRV
IVDRV = 0.1 − 25 mA
NCV887100
NCV887101
NCV887102
NCV887103
NCV887104
10
6.0
6.0
8.0
8.0
10.5
6.3
6.3
8.4
8.4
11
6.6
6.6
8.8
8.8
V
UVLO
Undervoltage lock−out,
Threshold voltage
Vuvlo
VIN falling
3.0
3.1
3.2
V
Undervoltage lock−out,
Hysteresis
Vuvlo,hys
VIN rising
50
125
200
mV


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