MGSF1N03LT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 3. On–Resistance versus Drain Current

Figure 4. On–Resistance versus Drain Current

Figure 5. On–Resistance Variation with Temperature

0.001

0.1

1

Figure 6. Gate Charge

VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 7. Body Diode Forward Voltage

0

0.1

0.2

0.3

0.9

0.01

0.4

Figure 8. Capacitance

VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)

0

8

16

20

4

12

Ciss

Coss

Crss

350

50

VGS = 0 V

f = 1 MHz

TJ = 25°C

0

0.5

0.6

0.7

0.8

0

0.2

0.4

0.6

0.8

0.04

0.14

ID, DRAIN CURRENT (AMPS)

25

°C

VGS = 4.5 V

0.09

0.1

0.3

0.5

0.7

150

°C

–55

°C

0.9

1

0.24

0.19

0

0.4

0.8

1.2

1.6

0.04

0.1

0.12

ID, DRAIN CURRENT (AMPS)

VGS = 10 V

0.08

0.06

0.14

0.2

0.6

1

1.4

1.8

2

25

°C

150

°C

–55

°C

0

0.8

TJ, JUNCTION TEMPERATURE (°C)

VGS = 10 V

ID = 2 A

– 55

0

50

100

150

0.2

0.4

0.6

1

1.2

1.4

1.6

VGS = 4.5 V

ID = 1 A

0

10

6

2

0

QT, TOTAL GATE CHARGE (pC)

8

4

1000

6000

VDS = 24 V

TJ = 25°C

2000

ID = 2.0 A

3000

5000

4000

TJ = 150°C

–55

°C

25

°C

0.16

1.8

– 25

25

75

125

100

150

200

250

300