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NCP1075 Datasheet(PDF) 4 Page - ON Semiconductor

Part # NCP1075
Description  High-Voltage Switcher for Low Power Offline SMPS
Download  26 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP1075 Datasheet(HTML) 4 Page - ON Semiconductor

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NCP1072, NCP1075
http://onsemi.com
4
MAXIMUM RATINGS TABLE
Symbol
Rating
Value
Unit
VCC
Power Supply Voltage on all pins, except Pin 5(Drain)
−0.3 to 10
V
BVdss
Drain voltage
−0.3 to 700
V
IDS(PK)
Drain Current Peak during Transformer Saturation
2 x IIpeak(0)
A
I_VCC
Maximum Current into Pin 1 when Activating the 8.2 V Active Clamp
15
mA
RqJ−A
P Suffix, Case 626A
0.36 Sq. Inch
77
°C/W
Junction−to−Air, 2.0 oz Printed Circuit Copper Clad
1.0 Sq. Inch
60
RqJ−A
ST Suffix, Plastic Package Case 318E
0.36 Sq. Inch
74
°C/W
Junction−to−Air, 2.0 oz Printed Circuit Copper Clad
1.0 Sq. Inch
55
TJMAX
Maximum Junction Temperature
150
°C
Storage Temperature Range
−60 to +150
°C
ESD Capability, HBM model (All pins except HV)
2
kV
ESD Capability, Machine Model
200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per JEDEC JESD22−A114−F
Machine Model Method 200 V per JEDEC JESD22−A115−A
2. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78
ELECTRICAL CHARACTERISTICS
(For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, VCC = 8 V unless otherwise noted)
Symbol
Rating
Pin
Min
Typ
Max
Unit
SUPPLY SECTION AND VCC MANAGEMENT
VCC(on)
VCC increasing level at which the switcher starts operation
1
7.8
8.2
8.6
V
VCC(min)
VCC decreasing level at which the HV current source restarts
1
6.5
6.8
7.2
V
VCC(off)
VCC decreasing level at which the switcher stops operation (UVLO)
1
6.1
6.3
6.6
V
VCC(reset)
VCC voltage at which the internal latch is reset (guaranteed by design)
1
4
V
VCC(clamp) Offset voltage above VCC(on) at which the internal clamp activates
1
130
190
300
mV
ICC1
Internal IC consumption, MOSFET switching at 65 kHz
1
0.7
1.0
mA
ICCskip
Internal IC consumption, FB is 0 V (No switching on MOSFET)
1
360
mA
POWER SWITCH CIRCUIT
RDS(on)
Power Switch Circuit on−state resistance
NCP107x (Id = 50 mA)
TJ = 25°C
TJ = 125°C
5
11
19
16
24
W
BVDSS
Power Switch Circuit & Startup breakdown voltage
(ID(off) = 120 mA, TJ = 25°C)
5
700
V
IDSS(off)
Power Switch & Startup breakdown voltage off−state leakage current
TJ = 125°C (Vds = 700 V)
5
85
mA
ton
toff
Switching characteristics (RL=50 W, VDS set for Idrain = 0.7 x Ilim)
Turn−on time (90% − 10%)
Turn−off time (10% − 90%)
5
5
20
10
ns
INTERNAL START−UP CURRENT SOURCE
Istart1
High−voltage current source, VCC = VCC(on) – 200 mV
5
5
9
12
mA
3. The final switch current is: IIPK(0) / (Vin/LP + Sa) x Vin/LP + Vin/LP x tprop, with Sa the built−in slope compensation, Vin the input voltage, LP
the primary inductor in a flyback, and tprop the propagation delay..
4. NCP1072 130 kHz on demand only.
5. Oscillator frequency is measured with disabled jittering.


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