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SMUN5215T1G Datasheet(PDF) 4 Page - ON Semiconductor

Part # SMUN5215T1G
Description  Digital Transistors (BRT) R1 = 10 k, R2 =  k
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SMUN5215T1G Datasheet(HTML) 4 Page - ON Semiconductor

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MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
http://onsemi.com
4
Table 2. THERMAL CHARACTERISTICS
Characteristic
Unit
Max
Symbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBC114TF3)
Total Device Dissipation
TA = 25°C
(Note 3)
(Note 4)
Derate above 25°C
(Note 3)
(Note 4)
PD
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance,
(Note 3)
Junction to Ambient
(Note 4)
RqJA
493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
RqJL
193
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
0.9
mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE
160
350
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
0.6
Vdc
Input Voltage (on)
(VCE = 0.2 V, IC = 10 mA)
Vi(on)
1.4
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
7.0
10
13
kW
Resistor Ratio
R1/R2
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.


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