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DTA115EM3 Datasheet(PDF) 4 Page - ON Semiconductor

Part # DTA115EM3
Description  Digital Transistors (BRT) R1 = 100 k, R2 = 100 k
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

DTA115EM3 Datasheet(HTML) 4 Page - ON Semiconductor

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MUN2136, MUN5136, DTA115EE, DTA115EM3
http://onsemi.com
4
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
0.05
mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 5.0 mA, VCE = 10 V)
hFE
80
150
Collector−Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
1.2
Vdc
Input Voltage (on)
(VCE = 0.2 V, IC = 1.0 mA)
Vi(on)
1.7
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
70
100
130
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.


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