© Semiconductor Components Industries, LLC, 2009

August, 2009 − Rev. 5

1

Publication Order Number:

MMBV105GLT1/D

MMBV105GLT1G

Silicon Tuning Diode

This device is designed in the Surface Mount package for general

frequency control and tuning applications. It provides solid−state

reliability in replacement of mechanical tuning methods.

Features

Compliant

Rating

Symbol

Value

Unit

Reverse Voltage

30

Vdc

Forward Current

200

mAdc

Derate above 25°C

225

1.8

mW

mW/°C

Junction Temperature

+125

°C

Storage Temperature Range

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://onsemi.com

SOT−23 (TO−236)

CASE 318

STYLE 8

Device

Package

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBV105GLT1G

SOT−23

(Pb−Free)

3,000 / Tape & Reel

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

3

Cathode

1

Anode

1

M4EM G

G

M4E = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

1

2

3

(Note: Microdot may be in either location)

MARKING DIAGRAM