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VS-60APU02-N3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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VS-60APU02-N3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3 www.vishay.com Vishay Semiconductors Revision: 15-Aug-11 1 Document Number: 94021 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ultrafast Soft Recovery Diode, 60 A FRED Pt® FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Output rectification • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. PRODUCT SUMMARY Package TO-247AC, TO-247AC modified (2 pins) IF(AV) 60 A VR 200 V VF at IF 1.08 V trr typ. See Recovery table TJ max. 175 °C Diode variation Single die TO-247AC modified TO-247AC 2 1 3 Cathode Anode Base common cathode 2 Anode 1 Anode 3 Base common cathode VS-60EPU02PbF VS-60APU02PbF VS-60EPU02-N3 VS-60APU02-N3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage VR 200 V Continuous forward current IF(AV) TC = 127 °C 60 A Single pulse forward current IFSM TC = 25 °C 800 Maximum repetitive forward current IFRM Square wave, 20 kHz 120 Operating junction and storage temperatures TJ, TStg - 55 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 200 - - V Forward voltage VF IF = 60 A - 0.98 1.08 IF = 60 A, TJ = 175 °C - 0.81 0.88 Reverse leakage current IR VR = VR rated - - 50 μA TJ = 150 °C, VR = VR rated - - 2 mA Junction capacitance CT VR = 200 V - 87 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH |
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