VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3

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Vishay Semiconductors

Revision: 15-Aug-11

1

Document Number: 94021

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Output rectification

• Compliant to RoHS Directive 2002/95/EC

• Designed

and

qualified

according

to

JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

BENEFITS

• Reduced RFI and EMI

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI in

high frequency power conditioning systems.

The softness of the recovery eliminates the need for a

snubber in most applications. These devices are ideally

suited for HF welding, power converters and other

applications where switching losses are not significant

portion of the total losses.

PRODUCT SUMMARY

Package

TO-247AC,

TO-247AC modified (2 pins)

60 A

200 V

1.08 V

See Recovery table

175 °C

Diode variation

Single die

TO-247AC modified

TO-247AC

2

1

3

Cathode

Anode

Base

common

cathode

2

Anode

1

Anode

3

Base

common

cathode

VS-60EPU02PbF

VS-60APU02PbF

VS-60EPU02-N3

VS-60APU02-N3

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

200

V

Continuous forward current

60

A

Single pulse forward current

800

Maximum repetitive forward current

Square wave, 20 kHz

120

Operating junction and storage temperatures

- 55 to 175

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

200

-

-

V

Forward voltage

-

0.98

1.08

-

0.81

0.88

Reverse leakage current

-

-

50

μA

-

-

2

mA

Junction capacitance

-

87

-

pF

Series inductance

Measured lead to lead 5 mm from package body

-

8.0

-

nH