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MGS13002D Datasheet(PDF) 3 Page - Motorola, Inc

Part No. MGS13002D
Description  Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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 3 page
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MGS13002D
3
Motorola IGBT Device Data
Figure 1. Saturation Characteristics
Figure 2. Saturation Characteristics
Figure 3. Saturation Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Case Temperature
Figure 5. Diode Forward Voltage Drop
Figure 6. Diode Forward Voltage versus Case
Temperature
1
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
6
0
1.5
0.5
0
TC, CASE TEMPERATURE (°C)
0
–25
2.0
1.8
1.7
1.6
1.5
1.4
25
0.5
1.5
0
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
22
12
7
2
TC, CASE TEMPERATURE (°C)
50
125
10
8
6
2
0
100
1.0
0.5
0
23
1
2
3
4
5
1.0
2.0
2.5
50
75
100
125
150
2.0
17
25
75
150
4
4
1
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
23
4
1.9
TC = 25°C
VGE = 15 V
12.5 V
10 V
8.0 V
TC = 150°C
VGE = 15 V
12.5 V
10 V
8.0 V
TC = –20°C
VGE = 15 V
12.5 V
10 V
8.0 V
IC = 700 mA
VG = 15 V
500 mA
300 mA
TC = 150°C
–20
°C
25
°C
IC = 500 mA
300 mA
100 mA




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