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MGS13002D Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MGS13002D
Description  Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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 2 page
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MGS13002D
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
600
680
0.7
Vdc
V/
°C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C)
ICES
0.1
5.0
5.0
50
µAdc
Gate–Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc)
IGES
10
100
mAdc
ON CHARACTERISTICS
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 0.3 Adc)
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C)
VCE(on)
1.6
1.5
2.0
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
3.5
6.0
6.0
Vdc
mV/
°C
Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc)
gfe
0.3
0.42
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
20 Vdc V
0 Vdc
Cies
75
100
pF
Output Capacitance
(VCE = 20 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Coes
11
20
Transfer Capacitance
f = 1.0 MHz)
Cres
1.6
5.0
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 0.3 Adc)
(IEC = 0.3 Adc, TC = 125°C)
(IEC = 0.1 Adc)
(IEC = 0.1 Adc, TC = 125°C)
VFEC
5.0
5.2
2.3
2.3
6.0
3.0
Vdc
Reverse Recovery Time
(IF = 0.4 Adc, VR = 300 Vdc,
trr
150
ns
Reverse Recovery Stored Charge
( F
,
R
,
dIF/dt = 10 A/
ms)
QRR
35
mC
SWITCHING CHARACTERISTICS(1)
Turn–Off Delay Time
(VCC = 300 Vdc, IC = 0.4 Adc,
V15 Vd
L
3 0
H R
25
td(off)
28
ns
Fall Time
VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,
TC = 25°C, dV/dt = 1000 V/ms)
tf
150
Turn–Off Switching Loss
TC = 25 C, dV/dt = 1000 V/ms)
Energy losses include “tail”
Eoff
3.25
mJ
Turn–Off Delay Time
(VCC = 300 Vdc, IC = 0.4 Adc,
V15 Vd
L
3 0
H R
25
td(off)
21
ns
Fall Time
VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,
TC = 125°C, dV/dt = 1000 V/ms)
tf
280
Turn–Off Switching Loss
TC = 125 C, dV/dt = 1000 V/ms)
Energy losses include “tail”
Eoff
8.0
mJ
Gate Charge
(VCC = 300 Vdc, IC = 0.3 Adc,
VGE = 15 Vdc)
QT
6.4
nC
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.




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