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MGS13002D Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MGS13002D
Description  Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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Motorola IGBT Device Data
Designer's™ Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate
protection zener diodes. Fast switching characteristics result in
efficient operation at higher frequencies. This device is ideally
suited for high frequency electronic ballasts.
• Built–In Free Wheeling Diodes
• Built–In Gate Protection Zener Diode
• Industry Standard Package (TO92 — 1.0 Watt)
• High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and
dV/dt = 1000 V/
ms
• Robust High Voltage Termination
• Robust Turn–Off SOA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameters
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
600
Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)
VCGR
600
Vdc
Gate–Emitter Voltage — Continuous
VGES
± 15
Vdc
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
IC25
IC90
ICM
0.5
0.3
2.0
Adc
Total Power Dissipation @ TC = 25°C
PD
1.0
Watt
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
25
125
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 5 seconds
TL
260
°C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C)
Single Pulse Drain–to–Source Avalanche
Energy – Starting @ TC = 25°C
Energy – Starting @ TC = 125°C
VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W
EAS
125
40
mJ
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
REV 2
Order this document
by MGS13002D/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MGS13002D
IGBT
0.5 A @ 25
°C
600 V
CASE 029–05
STYLE 35
TO–226AE
E
C
G
C
E
G
© Motorola, Inc. 1998




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