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MGS13002D Datasheet(PDF) 5 Page - Motorola, Inc

Part No. MGS13002D
Description  Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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 5 page
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MGS13002D
5
Motorola IGBT Device Data
t, TIME (ms)
1.0
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
R
θJC(t) = r(t) RθJC
R
θJC = 25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 12. Typical Thermal Response
(RqJC(t))




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