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MGS13002D Datasheet(PDF) 4 Page - Motorola, Inc

Part No. MGS13002D
Description  Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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 4 page
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MGS13002D
4
Motorola IGBT Device Data
Figure 7. Capacitance Variation
Figure 8. Gate–To–Emitter Voltage versus
Total Charge
Figure 9. Total Switching Losses versus
Collector Current
Figure 10. Total Switching Losses versus
Case Temperature
Figure 11. Minimum Turn–Off
Safe Operating Area
20
25
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
150
100
50
Qg, TOTAL GATE CHARGE (nC)
6
0
10
5
0
2.0
0
IC, COLLECTOR CURRENT (AMPS)
60
40
30
20
10
0
TC, CASE TEMPERATURE (°C)
50
25
20
15
10
5
0
1.5
100
300
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
200
0
10
515
7
12
34
5
15
0.5
1.0
75
100
150
400
600
500
50
125
VCE = 300 V
VGE = 15 V
IC = 0.3 A
TC = 25°C
TC = 25°C
VGE = 0 V
Cies
Coes
Cres
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25 W
dV/dt = 1.0 kV/
ms
TJ = 125°C
25
°C
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25 W
dV/dt = 1.0 kV/
ms
IC = 0.7 A
0.3 A
TC = 125°C
VGE = 15 V
RG = 25 W
L = 3.0 mH




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