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ECH8315-TL-H Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ECH8315-TL-H
Description  General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ECH8315-TL-H Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ECH8315
No. A1387-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min.
typ.
max.
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--3.5A
5
8.4
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--3.5A, VGS=--10V
19
25
RDS(on)2
ID=--2A, VGS=--4.5V
31
44
RDS(on)3
ID=--2A, VGS=--4V
35
49
Input Capacitance
Ciss
VDS=--10V, f=1MHz
875
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
200
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
150
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
8.1
ns
Rise Time
tr
33
ns
Turn-OFF Delay Time
td(off)
92
ns
Fall Time
tf
60
ns
Total Gate Charge
Qg
VDS=--15V, VGS=--10V, ID=--7.5A
18
nC
Gate-to-Source Charge
Qgs
2.1
nC
Gate-to-Drain “Miller” Charge
Qgd
4.7
nC
Diode Forward Voltage
VSD
IS=--7.5A, VGS=0V
--0.82
--1.2
V
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
ECH8315-TL-H
ECH8
3,000pcs./reel
Pb-Free and Halogen Free
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --3.5A
RL=4.3Ω
VDD= --15V
VOUT
VIN
0V
--10V
VIN
ECH8315


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