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ECH8309 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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ECH8309 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 7 page ECH8309 No. A1418-1/7 Features • 1.8V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --9.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --40 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions unit : mm (typ) 7011A-002 52312 TKIM/22509PE MSIM TC-00001633 SANYO Semiconductors DATA SHEET http://semicon.sanyo.com/en/network Product & Package Information • Package : ECH8 • JEITA, JEDEC : - • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection Ordering number : ENA1418B ECH8309 P-Channel Silicon MOSFET General-Purpose Switching Device Applications 87 6 5 12 3 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 1 4 85 0.15 0 t o 0.02 0.65 2.9 0.3 To p View Bo tto m View TL ECH8309-TL-H JL Lot No. |
Similar Part No. - ECH8309_12 |
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Similar Description - ECH8309_12 |
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