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CPH3351-TL-H Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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CPH3351-TL-H Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 7 page CPH3351 No. A1880-1/7 Features • ON-resistance RDS(on)1=190mΩ(typ.) • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --1.8 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --7.2 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions unit : mm (typ) 7015A-004 Ordering number : ENA1880A 60612 TKIM/D0810PE TKIM TC-00002526 CPH3351 P-Channel Silicon MOSFET General-Purpose Switching Device Applications http://semicon.sanyo.com/en/network Product & Package Information • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection 1 2 3 TL SANYO Semiconductors DATA SHEET CPH3351-TL-H 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 2.9 0.05 0.4 0.15 2 1 3 0.95 |
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