BAS116LT3G datasheet(2/3 Pages) ONSEMI

Part #	BAS116LT3G

Description	Switching Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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BAS116LT1G, SBAS116LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (IBR = 100 mAdc)

V(BR)

75

−

Vdc

Reverse Voltage Leakage Current (VR = 75 Vdc)

Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C)

IR

−

5.0

80

nAdc

Forward Voltage (IF = 1.0 mAdc)

Forward Voltage (IF = 10 mAdc)

Forward Voltage (IF = 50 mAdc)

Forward Voltage (IF = 150 mAdc)

VF

−

900

1000

1100

1250

mV

Diode Capacitance (VR = 0 V, f = 1.0 MHz)

CD

−

2.0

pF

Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)

trr

−

3.0

ms

1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

3. tp » trr

+10 V

2.0 k

820

W

0.1

mF

DUT

VR

100

mH

0.1

mF

50 W Output

Pulse

Generator

50

W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

TYPICAL CHARACTERISTICS

Figure 2. Forward Voltage

Figure 3. Capacitance

VF, FORWARD VOLTAGE (V)

VR, REVERSE VOLTAGE (V)

1.2

1.0

0.8

0.6

0.4

0.2

0

0.1

1

10

100

1,000

70

60

50

40

30

20

10

0

0.2

0.4

0.6

0.8

1.0

1.2

150°C

−55°C

25°C

80

TA = 25°C

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