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VS-40TPS16-M3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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VS-40TPS16-M3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page VS-40TPS16PbF, VS-40TPS16-M3 www.vishay.com Vishay Semiconductors Revision: 10-Nov-11 2 Document Number: 94389 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current IT(AV) TC = 79 °C, 180° conduction half sine wave 35 A Maximum continuous RMS on-state current as AC switch IT(RMS) 55 Maximum peak, one-cycle non-repetitive surge current ITSM 10 ms sine pulse, rated VRRM applied Initial TJ = TJ maximum 500 10 ms sine pulse, no voltage reapplied 600 Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 1250 A2s 10 ms sine pulse, no voltage reapplied 1760 Maximum I2 t for fusing I2 t t = 0.1 to 10 ms, no voltage reapplied 12 500 A2 s Low level value of threshold voltage VT(TO)1 TJ = 125 °C 1.02 V High level value of threshold voltage VT(TO)2 1.23 Low level value of on-state slope resistance rt1 9.74 m High level value of on-state slope resistance rt2 7.50 Maximum peak on-state voltage VTM 110 A, TJ = 25 °C 1.85 V Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 100 A/µs Maximum holding current IH 150 mA Maximum latching current IL 300 Maximum reverse and direct leakage current IRRM/IDRM TJ = 25 °C VR = Rated VRRM/VDRM 0.5 TJ = 125 °C 10 Maximum rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open 1000 V/µs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM 10 W Maximum average gate power PG(AV) 2.5 Maximum peak gate current IGM 2.5 A Maximum peak negative gate voltage - VGM 10 V Maximum required DC gate voltage to trigger VGT TJ = - 40 °C Anode supply = 6 V resistive load 4.0 TJ = 25 °C 2.5 TJ = 125 °C 1.7 Maximum required DC gate current to trigger IGT TJ = - 40 °C 270 mA TJ = 25 °C 150 TJ = 125 °C 80 TJ = 25 °C, for 40TPS08A 40 Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25 V Maximum DC gate current not to trigger IGD 6mA |
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