VS-40TPS16PbF, VS-40TPS16-M3

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Vishay Semiconductors

Revision: 10-Nov-11

2

Document Number: 94389

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current

35

A

Maximum continuous RMS

on-state current as AC switch

55

Maximum peak, one-cycle

non-repetitive surge current

500

10 ms sine pulse, no voltage reapplied

600

1250

10 ms sine pulse, no voltage reapplied

1760

t for fusing

t

t = 0.1 to 10 ms, no voltage reapplied

12 500

s

Low level value of threshold voltage

1.02

V

High level value of threshold voltage

1.23

Low level value of on-state slope resistance

9.74

m



High level value of on-state slope resistance

7.50

Maximum peak on-state voltage

1.85

V

Maximum rate of rise of turned-on current

dI/dt

100

A/µs

Maximum holding current

150

mA

Maximum latching current

300

Maximum reverse and direct leakage current

0.5

10

Maximum rate of rise of off-state voltage

dV/dt

1000

V/µs

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

10

W

Maximum average gate power

2.5

Maximum peak gate current

2.5

A

Maximum peak negative gate voltage

10

V

Maximum required DC gate

voltage to trigger

Anode supply = 6 V resistive load

4.0

2.5

1.7

Maximum required DC gate current to trigger

270

mA

150

80

40

Maximum DC gate voltage not to trigger

0.25

V

Maximum DC gate current not to trigger

6mA