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ATP108 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ATP108 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 7 page  ATP108 No.A1604-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --40 V Zero-Gate Voltage Drain Current IDSS VDS=--40V, VGS=0V --1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.5 --2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=--35A 65 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--35A, VGS=--10V 8 10.4 mΩ RDS(on)2 ID=--18A, VGS=--4.5V 11.5 16.5 mΩ Input Capacitance Ciss VDS=--20V, f=1MHz 3850 pF Output Capacitance Coss 560 pF Reverse Transfer Capacitance Crss 390 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr 340 ns Turn-OFF Delay Time td(off) 340 ns Fall Time tf 290 ns Total Gate Charge Qg VDS=--20V, VGS=--10V, ID=--70A 79.5 nC Gate-to-Source Charge Qgs 20 nC Gate-to-Drain “Miller” Charge Qgd 15 nC Diode Forward Voltage VSD IS=--70A, VGS=0V --1.05 --1.5 V Switching Time Test Circuit Ordering Information Device Package Shipping memo ATP108-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P.G 50Ω G S D ID= --35A RL=0.57Ω VDD= --20V VOUT VIN 0V --10V VIN ATP108 |
Similar Part No. - ATP108_12 |
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Similar Description - ATP108_12 |
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