© Semiconductor Components Industries, LLC, 2011

October, 2011 − Rev. 7

1

Publication Order Number:

1SS400T1/D

1SS400T1G,

NSV1SS400T1G

High-Speed

Switching Diode

Features

Unique Site and Control Change Requirements

Compliant

Rating

Symbol

Max

Unit

Reverse Voltage

100

V

Forward Current

200

mAdc

Peak Forward Surge Current

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Derate above 25°C

200

1.57

mW

mW/°C

Thermal Resistance, Junction-to-Ambient

635

°C/W

Junction and Storage Temperature Range

−55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad.

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

−

0.1

mAdc

Diode Capacitance

−

3.0

pF

Forward Voltage

−

1.2

Vdc

Reverse Recovery Time

−

4.0

ns

http://onsemi.com

1

CATHODE

2

ANODE

SOD−523

CASE 502

PLASTIC

A = Device Code

M = Date Code*

G = Pb−Free Package

MARKING DIAGRAM

Device

Package

ORDERING INFORMATION

1

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

A M G

G

1

1SS400T1G

SOD−523

(Pb−Free)

3000 / Tape &

Reel

(Note: Microdot may be in either location)

*Date Code orientation may vary depending upon

manufacturing location.

NSV1SS400T1G

SOD−523

(Pb−Free)

3000 / Tape &

Reel