Electronic Components Datasheet Search |
|
SIR872DP Datasheet(PDF) 1 Page - Vishay Siliconix |
|
SIR872DP Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix SiR872DP Document Number: 63809 S12-0678-Rev. A, 22-Mar-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com N-Channel 150 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Fixed Telecom • DC/DC Converter • Primary and Secondary Side Switch Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 150 0.0180 at VGS = 10 V 53.7 31.5 nC 0.0200 at VGS = 7.5 V 51 Ordering Information: SiR872DP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK® SO-8 Bottom View N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 53.7 A TC = 70 °C 43 TA = 25 °C 12.8b, c TA = 70 °C 10.2b, c Pulsed Drain Current (t = 300 µs) IDM 100 Continuous Source-Drain Diode Current TC = 25 °C IS 60a TA = 25 °C 5.6b, c Single Pulse Avalanche Current L = 0.1 mH IAS 30 Single Pulse Avalanche Energy EAS 45 mJ Maximum Power Dissipation TC = 25 °C PD 104 W TC = 70 °C 66.6 TA = 25 °C 6.25b, c TA = 70 °C 4b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 10 s RthJA 15 20 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 0.9 1.2 |
Similar Part No. - SIR872DP |
|
Similar Description - SIR872DP |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |