SIR872DP datasheet(1/13 Pages) VISHAY

Part #	SIR872DP

Description	N-Channel 150 V (D-S) MOSFET

Download	13 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

1 / 13 page

Vishay Siliconix

SiR872DP

Document Number: 63809

S12-0678-Rev. A, 22-Mar-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical support, please contact: pmostechsupport@vishay.com

N-Channel 150 V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

•

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Fixed Telecom

•

DC/DC Converter

•

Primary and Secondary Side Switch

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 54 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) () Max.

ID (A)

Qg (Typ.)

150

0.0180 at VGS = 10 V

53.7

31.5 nC

0.0200 at VGS = 7.5 V

51

Ordering Information:

SiR872DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK® SO-8

Bottom View

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

150

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

53.7

A

TC = 70 °C

43

TA = 25 °C

12.8b, c

TA = 70 °C

10.2b, c

Pulsed Drain Current (t = 300 µs)

IDM

100

Continuous Source-Drain Diode Current

TC = 25 °C

IS

60a

TA = 25 °C

5.6b, c

Single Pulse Avalanche Current

L =

0.1 mH

IAS

30

Single Pulse Avalanche Energy

EAS

45

mJ

Maximum Power Dissipation

TC = 25 °C

PD

104

W

TC = 70 °C

66.6

TA = 25 °C

6.25b, c

TA = 70 °C

4b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

 10 s

RthJA

15

20

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

0.9

1.2

Similar Part No. - SIR872DP

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SIR872DP	339Kb / 13P	N-Channel 150 V (D-S) MOSFET 01-Jan-2022

More results

Similar Description - SIR872DP

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SIR838DP	118Kb / 7P	N-Channel 150 V (D-S) MOSFET Rev. B, 30-Sep-13
Analog Power	AM20N15-250B	369Kb / 5P	N-Channel 150-V (D-S) MOSFET
Analog Power	AM90N15-16B	332Kb / 5P	N-Channel 150-V (D-S) MOSFET
Vishay Siliconix	SIR622DP	422Kb / 13P	N-Channel 150 V (D-S) MOSFET Rev. A, 23-May-16
Analog Power	AM90N15-20P	123Kb / 3P	N-Channel 150-V (D-S) MOSFET
Vishay Siliconix	SI7846DP-T1-GE3	148Kb / 8P	N-Channel 150-V (D-S) MOSFET Rev. F, 06-Apr-09
	SI7898DP	198Kb / 4P	N-Channel 150-V (D-S) MOSFET Rev. B, 20-Feb-06
	SI4488DY	45Kb / 5P	N-Channel 150-V (D-S) MOSFET Rev. B, 26-May-03
Analog Power	AM70N15-40P	123Kb / 3P	N-Channel 150-V (D-S) MOSFET
VBsemi Electronics Co.,...	VBM1158N	658Kb / 8P	N-Channel 150 V (D-S) MOSFET
VBsemi Electronics Co.,...	15T15GH-HF	1Mb / 9P	N-Channel 150 V (D-S) MOSFET

More results

SIR872DP Datasheet(PDF) 1 Page - Vishay Siliconix

SIR872DP Datasheet(HTML) 1 Page - Vishay Siliconix

Similar Part No. - SIR872DP

Similar Description - SIR872DP

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL