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TPIC2301 Datasheet(PDF) 2 Page - Texas Instruments |
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TPIC2301 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 9 page TPIC2301 3-CHANNEL COMMON-SOURCE POWER DMOS ARRAY SLIS018 – SEPTMEBER 1992 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DS Drain-source breakdown voltage ID = 1 µA, VGS = 0 60 V VTGS Gate-source threshold voltage ID = 1 mA, VDS = VGS 1.2 1.75 2.4 V VDS(on) Drain-source on-state voltage ID = 7.5 A, VGS = 15 V, See Notes 3 and 4 0.68 0.94 V IDSS Zero gate voltage drain current VDS =48V VGS =0 TC = 25°C 0.07 1 µA IDSS Zero-gate-voltage drain current VDS = 48 V, VGS = 0 TC = 125°C 1.3 10 µA IGSSF Forward gate current, drain short circuited to source VGS = 20 V, VDS = 0 10 100 nA IGSSR Reverse gate current, drain short circuited to source VGS = – 20 V, VDS = 0 10 100 nA rDS( ) Static drain-source on-state VGS = 15 V, ID = 7.5 A, See Notes 3 and 4 and TC = 25°C 0.09 0.125 Ω rDS(on) resistance See Notes 3 and 4 and Figures 5 and 6 TC = 125°C 0.15 0.21 Ω gfs Forward transconductance VDS = 15 V, ID = 5 A, See Notes 3 and 4 3.3 4.7 S Ciss Short-circuit input capacitance, common source 490 Coss Short-circuit output capacitance, common source VDS = 25 V, VGS = 0, f = 300 kHz 285 pF Crss Short-circuit reverse transfer capacitance, common source 90 NOTES: 3. Technique should limit TJ – TC to 10°C maximum. 4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. source-drain diode characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VSD Forward on voltage I7 5 A V0 di/dt 100 A/ s 0.8 1.3 V trr Reverse recovery time IS = 7.5 A, VDS = 48 V, VGS = 0, See Figure 1 di/dt = 100 A/ µs, 200 ns QRR Total source-drain diode charge VDS = 48 V, See Figure 1 1.5 µC resistive-load switching characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td(on) Turn-on delay time 12 td(off) Turn-off delay time VDD = 25 V, RL = 6.7 Ω,ten = 10 ns, 100 ns tr Rise time DD , t dis = 10 ns, L , See Figure 2 en , 43 ns tf Fall time 5 Qg Total gate charge V48 V I2 5 A V10 V 13.6 18 Qgs Gate-source charge VDS = 48 V, See Figure 3 ID = 2.5 A, VGS = 10 V, 8.3 11 nC Qgd Gate-drain charge See Figure 3 5.3 7 LD Internal drain inductance 7 nH LS Internal source inductance 7 nH thermal resistance PARAMETER TEST CONDITIONS MIN TYP MAX UNIT R θJA Junction-to-ambient thermal resistance All outputs with equal power 62.5 °C/W R θJC Junction to case thermal resistance All outputs with equal power 1.5 °C/W R θJC Junction-to-case thermal resistance One output dissipating power 3.3 °C/W |
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