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TLC555-DIE Datasheet(PDF) 2 Page - Texas Instruments |
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TLC555-DIE Datasheet(HTML) 2 Page - Texas Instruments |
2 / 5 page TLC555-DIE SLFS079 – JULY 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. BARE DIE INFORMATION BACKSIDE BOND PAD BOND PAD DIE THICKNESS BACKSIDE FINISH POTENTIAL METALLIZATION COMPOSITION THICKNESS 11 mils. Silicon with backgrind Floating TiW/AlSi (1%)Cu (0.5%) 760 nm 2 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated |
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