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ALD114935SAL Datasheet(PDF) 2 Page - Advanced Linear Devices |
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ALD114935SAL Datasheet(HTML) 2 Page - Advanced Linear Devices |
2 / 11 page ALD114835/ALD114935 Advanced Linear Devices 2 of 11 Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Power dissipation 500 mW Operating temperature range SCL, PCL, SAL, PAL package 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds +260°C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V V- = -5V TA = 25°C unless otherwise specified ABSOLUTE MAXIMUM RATINGS Gate Threshold Voltage VGS(th) -3.55 -3.50 -3.45 V IDS = 1µA, VDS = 0.1V Offset Voltage VOS 720 mV VGS(th)1-VGS(th)2 Offset VoltageTempco TCVOS 5 µV/ °CVDS1 = VDS2 GateThreshold Voltage Tempco TCVGS(th) -1.7 mV/ °CID = 1µA, VDS = 0.1V 0.0 ID = 20µA, VDS = 0.1V +1.6 ID = 40µA, VDS = 0.1V On Drain Current IDS (ON) 12.0 mA VGS = +6.0V, VDS = +5V 3.0 VGS = +0.5V, VDS = +5V Forward Transconductance GFS 1.4 mmho VGS = +0.5V VDS = +5.5V Transconductance Mismatch ∆GFS 1.8 % Output Conductance GOS 68 µmho VGS = +0.5V VDS = +5.5V Drain Source On Resistance RDS (ON) 540 Ω VDS = 0.1V VGS = +0.0V Drain Source On Resistance ∆RDS (ON) 5% Tolerance Drain Source On Resistance ∆RDS (ON) 0.5 % Mismatch Drain Source Breakdown BVDSX 10 V IDS = 1.0µA Voltage VGS = -4.5V Drain Source Leakage Current1 IDS (OFF) 10 400 pA VGS = -4.5V, VDS =+5V 4nA TA = 125°C Gate Leakage Current1 IGSS 3 200 pA VDS = 0V, VGS = 5V 1nA TA =125°C Input Capacitance CISS 2.5 pF Transfer Reverse Capacitance CRSS 0.1 pF Turn-on Delay Time ton 10 ns V+ = 5V, RL= 5KΩ Turn-off Delay Time toff 10 ns V+ = 5V, RL= 5KΩ Crosstalk 60 dB f = 100KHz ALD114835/ALD114935 Parameter Symbol Min Typ Max Unit Test Conditions Notes: 1 Consists of junction leakage currents |
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