TPIC5404

HBRIDGE POWER DMOS ARRAY

SLIS023B − MARCH 1994 − REVISED SEPTEMBER 1995

2−3

POST OFFICE BOX 655303

POST OFFICE BOX 1443

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSX

Drain-to-source breakdown voltage

ID = 250 µA,

VGS = 0

60

V

VGS(th)

Gate-to-source threshold voltage

ID = 1 mA,

VDS = VGS

1.5

1.85

2.2

V

V(BR)

Reverse drain-to-GND breakdown voltage (across

D1, D2)

Drain-to-GND current = 250

µA

100

V

VDS(on)

Drain-to-source on-state voltage

ID = 2 A,

See Notes 2 and 3

VGS = 10 V,

0.6

0.7

V

VF

Forward on-state voltage, GND-to-drain

ID = 2 A (D1, D2),

See Notes 2 and 3

7.5

V

VF(SD)

Forward on-state voltage, source-to-drain

IS = 2 A,

VGS = 0 (Z1, Z2, Z3, Z4),

See Notes 2 and 3

1

1.2

V

IDSS

Zero-gate-voltage drain current

VDS = 48 V,

TC = 25°C

0.05

1

A

IDSS

Zero-gate-voltage drain current

VDS = 48 V,

VGS = 0

TC = 125°C

0.5

10

µA

IGSSF

Forward gate current, drain short circuited to source

VGS = 16 V,

VDS = 0

10

100

nA

IGSSR

Reverse gate current, drain short circuited to source

VSG = 16 V,

VDS = 0

10

100

nA

Ilkg

Leakage current, drain-to-GND

VR = 48 V

TC = 25°C

0.05

1

A

Ilkg

Leakage current, drain-to-GND

VR = 48 V

TC = 125°C

0.5

10

µA

rDS(on)

Static drain-to-source on-state resistance

VGS = 10 V,

ID = 2 A,

TC = 25°C

0.3

0.35

Ω

rDS(on)

Static drain-to-source on-state resistance

ID = 2 A,

See Notes 2 and 3

and Figures 6 and 7

TC = 125°C

0.41

0.5

Ω

gfs

Forward transconductance

VDS = 15 V,

See Notes 2 and 3

ID = 1 A,

1.6

1.9

S

Ciss

Short-circuit input capacitance, common source

220

275

Coss

Short-circuit output capacitance, common source

VDS = 25 V,

f = 1 MHz

VGS = 0,

120

150

pF

Crss

Short-circuit reverse-transfer capacitance,

common source

VDS = 25 V,

f = 1 MHz

VGS = 0,

100

125

pF

NOTES:

2. Technique should limit TJ − TC to 10°C maximum, pulse duration ≤ 5 ms.

3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

trr(SD) Reverse-recovery time

IS = 1 A,

VGS = 0,

di/dt = 100 A/

µs,

VDS = 48 V,

(Z1 and Z3),

120

ns

QRR

Total diode charge

SGS

di/dt = 100 A/

µs,

See Figure 1

DS

(Z1 and Z3),

0.12

µC

trr(SD) Reverse-recovery time

IS = 1 A,

VGS = 0,

di/dt = 100 A/

µs,

VDS = 48 V,

(Z2 and Z4),

280

ns

QRR

Total diode charge

SGS

di/dt = 100 A/

µs,

See Figure 1

DS

(Z2 and Z4),

0.9

µC

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

trr

Reverse-recovery time

IF = 1 A,

VDS = 48 V,

260

ns

QRR

Total diode charge

IF = 1 A,

di/dt = 100 A/

µs,

VDS = 48 V,

See Figure 1

2.2

µC