1

Motorola TMOS Power MOSFET Transistor Device Data

Advanced Information

SMARTDISCRETES™

Internally Clamped, N-Channel

IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT)

features Gate–Emitter ESD protection, Gate–Collector overvoltage

protection from SMARTDISCRETES

™ monolithic circuitry for

usage as an Ignition Coil Driver.

• Temperature Compensated Gate–Drain Clamp Limits Stress

Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage to Interface Power Loads to Logic or

Microprocessors

• Low Saturation Voltage

• High Pulsed Current Capability

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCES

CLAMPED

Vdc

Collector–Gate Voltage

VCGR

CLAMPED

Vdc

Gate–Emitter Voltage

VGE

CLAMPED

Vdc

Collector Current — Continuous @ TC = 25°C

IC

20

Adc

Reversed Collector Current – pulse width

t 100 ms

ICR

12

Apk

Total Power Dissipation @ TC = 25°C (TO–220)

PD

150

Watts

Electrostatic Voltage — Gate–Emitter

ESD

3.5

kV

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 175

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case – (TO–220)

RqJC

RqJA

1.0

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 5 seconds

TL

275

°C

Mounting Torque, 6–32 or M3 screw

10 lbf

in (1.13 Nm)

UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS

Single Pulse Collector–Emitter Avalanche Energy

@ Starting TJ = 25°C

@ Starting TJ = 150°C

EAS

550

150

mJ

SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Order this document

by MGP20N35CL/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MGP20N35CL

20 AMPERES

VOLTAGE CLAMPED

N–CHANNEL IGBT

Vce(on) = 1.8 VOLTS

350 VOLTS (CLAMPED)

CASE 221A–06, Style 9

TO–220AB

G

C

E

®

C

G

E

Rge

© Motorola, Inc. 1995