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MGP20N35CL Datasheet(PDF) 1 Page - Motorola, Inc |
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MGP20N35CL Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 6 page 1 Motorola TMOS Power MOSFET Transistor Device Data Advanced Information SMARTDISCRETES™ Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES ™ monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors • Low Saturation Voltage • High Pulsed Current Capability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES CLAMPED Vdc Collector–Gate Voltage VCGR CLAMPED Vdc Gate–Emitter Voltage VGE CLAMPED Vdc Collector Current — Continuous @ TC = 25°C IC 20 Adc Reversed Collector Current – pulse width t 100 ms ICR 12 Apk Total Power Dissipation @ TC = 25°C (TO–220) PD 150 Watts Electrostatic Voltage — Gate–Emitter ESD 3.5 kV Operating and Storage Temperature Range TJ, Tstg – 55 to 175 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – (TO–220) Thermal Resistance — Junction to Ambient RqJC RqJA 1.0 62.5 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 5 seconds TL 275 °C Mounting Torque, 6–32 or M3 screw 10 lbf in (1.13 Nm) UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C @ Starting TJ = 150°C EAS 550 150 mJ SMARTDISCRETES and TMOS are trademarks of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. Order this document by MGP20N35CL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.8 VOLTS 350 VOLTS (CLAMPED) CASE 221A–06, Style 9 TO–220AB G C E ® C G E Rge © Motorola, Inc. 1995 |
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