TM4SK64KPU 4194304 BY 64BIT

TM8SK64KPU 8388608 BY 64BIT

SYNCHRONOUS DYNAMIC RAM MODULES SODIMM

SMMS691A − AUGUST 1997 − REVISED NOVEMBER 1997

11

POST OFFICE BOX 1443

serial presence detect

The serial presence detect (SPD) is contained in a 2K-bit serial EEPROM located on the module. The SPD

nonvolatile EEPROM contains various data such as module configuration, SDRAM organization, and timing

parameters (see tables below). Only the first 128 bytes are programmed by Texas Instruments, while the

remaining 128 bytes are available for customer use. Programming is done through an IIC bus using the clock

(SCL) and data (SDA) signals. All Texas Instruments modules comply with the current JEDEC SPD Standard.

See the Texas Instruments Serial Presence Detect Technical Reference (literature number SMMU001) for

further details.

Tables in this section list the SPD contents as follow:

Table 1—TM4SK64KPU. Table 2—TM8SK64KPU.

Table 1. Serial-Presence-Detect Data for the TM4SK64KPU

BYTE

DESCRIPTION OF FUNCTION

TM4SK64KPU-10

TM4SK64KPU-12

BYTE

NO.

DESCRIPTION OF FUNCTION

ITEM

DATA

ITEM

DATA

0

Defines number of bytes written into serial memory

during module manufacturing

128 bytes

80h

128 bytes

80h

1

Total number of bytes of SPD memory device

256 bytes

08h

256 bytes

08h

2

Fundamental memory type (FPM, EDO, SDRAM, . . .)

SDRAM

04h

SDRAM

04h

3

Number of row addresses on this assembly

12

0Ch

12

0Ch

4

Number of column addresses on this assembly

8

08h

8

08h

5

Number of module banks on this assembly

1 bank

01h

1 bank

01h

6

Data width of this assembly

64 bits

40h

64 bits

40h

7

Data width continuation

00h

00h

8

Voltage interface standard of this assembly

LVTTL

01h

LVTTL

01h

9

SDRAM cycle time at maximum supported CAS latency

(CL), CL = X

tCK = 10 ns

A0h

tCK = 12 ns

C0h

10

SDRAM access from clock at CL = X

tAC = 7.5 ns

75h

tAC = 8 ns

80h

11

SODIMM configuration type (non-parity, parity, error

correcting code [ECC])

Non-Parity

00h

Non-Parity

00h

12

Refresh rate / type

15.6

µs/

self-refresh

80h

15.6

µs/

self-refresh

80h

13

SDRAM width, primary DRAM

x16

10h

x16

10h

14

Error-checking SDRAM data width

N/A

00h

N/A

00h

15

Minimum clock delay, back-to-back random column

addresses

1 CK cycle

01h

1 CK cycle

01h

16

Burst lengths supported

1, 2, 4, 8, full page

8Fh

1, 2, 4, 8, full page

8Fh

17

Number of banks on each SDRAM device

4 banks

04h

4 banks

04h

18

CAS latencies supported

2, 3

06h

2, 3

06h

19

CS latency

0

01h

0

01h

20

Write latency

0

01h

0

01h

21

SDRAM module attributes

Non-buffered/

Non-registered

00h

Non-buffered/

Non-registered

00h

22

SDRAM device attributes: general

VDD tolerance =

(

"10%),

Burst read / write,

precharge all,

auto precharge

0Eh

VDD tolerance =

(

"10%),

Burst read / write,

precharge all,

auto precharge

0Eh

23

Minimum clock cycle time at CL = X − 1

tCK = 15 ns

F0h

tCK = 15 ns

F0h