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ALD1108EPCL Datasheet(PDF) 1 Page - Advanced Linear Devices |
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ALD1108EPCL Datasheet(HTML) 1 Page - Advanced Linear Devices |
1 / 14 page Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com ALD1108E/ALD1110E BLOCK DIAGRAM Operating Temperature Range* 0 °C to +70°C0°C to +70°C -55 °C to +125°C 8-Pin SOIC 8-Pin Plastic Dip 8-Pin CERDIP Package Package Package ALD1110ESAL ALD1110EPAL ALD1110EDA 16-Pin SOIC 16-Pin Plastic Dip 16-Pin CERDIP Package Package Package ALD1108ESCL ALD1108EPCL ALD1108EDC ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) * Contact factory for leaded (non-RoHS) or high temperature versions. BLOCK DIAGRAM QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™) PN1 (1) DN1 (3) GN1(2) DN2 (6) PN2 (8) GN2 (7) V- (4) V+(5) S12 (4) ALD1110E EPAD 1 EPAD 2 ~ EPAD 1 EPAD 2 EPAD 3 EPAD 4 PN4 (8) PN (1) DN1 (3) GN1(2) DN2 (14) PN2 (16) GN2 (15) PN3 (9) DN3 (11) GN3(10) DN4 (6) GN4 (7) V- (5) V+(13) S12 (4) S34 (12) ALD1108E ~ GENERAL DESCRIPTION ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically Programmable Analog Device) N-channel MOSFETs with electrically adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are matched and adjusted (e-trimmed) at the factory resulting in quad/dual MOSFETs that are highly matched in threshold voltages and other electrical characteristics. For a given input voltage, the threshold voltage of a MOSFET device determines its drain on-current, resulting in an on- resistance characteristic that can be precisely preset and then controlled by the input voltage very accurately. Using an ALD1108E/ALD1110E is simple and straight forward. The MOSFETs function as n-channel MOSFETs, except that all the devices have exceptional matching to each other in electrical characteristics. Since these devices are on the same monolithic chip, they also exhibit excellent tempco matching characteristics. These MOSFET devices have very low input currents, and as a result a very high input impedance (>1012 Ohm). The gate voltage from a control source can drive many MOSFET inputs with practically no loading effects. Used in precision current mirror or current multiplier applications, they can be used to provide a current source over a 100nA to 3mA range, and with either a positive, negative or zero tempco. eEPAD TM ® N A B L E D E ADVANCED LINEAR DEVICES, INC. BENEFITS • Precision matched electrically after packaging • Simple, elegant single-chip user option to trim voltage/current values • Excellent device matching characteristics with or without additional electrical trim • Remotely and electrically trim parameters on circuits that are physically inaccessible PIN CONFIGURATION TOP VIEW SCL, PCL, DC PACKAGES TOP VIEW SAL, PAL, DA PACKAGES PN2 1 2 3 6 7 8 4 5 V+ GN1 DN1 PN1 S12, V- DN2 GN2 v+ ALD1110E EPAD 1 EPAD 2 PN2 1 2 3 14 15 16 4 13 V+ 5 12 S34 PN3 6 7 8 10 11 GN1 DN1 PN1 S12 V- GN4 PN4 DN4 9 GN3 DN3 DN2 GN2 v- v+ ALD1108E EPAD 1 EPAD 2 EPAD 4 EPAD 3 |
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