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ALD1108EPCL Datasheet(PDF) 1 Page - Advanced Linear Devices

Part # ALD1108EPCL
Description  QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD??
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Manufacturer  ALD [Advanced Linear Devices]
Direct Link  http://www.aldinc.com
Logo ALD - Advanced Linear Devices

ALD1108EPCL Datasheet(HTML) 1 Page - Advanced Linear Devices

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Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ALD1108E/ALD1110E
BLOCK DIAGRAM
Operating Temperature Range*
0
°C to +70°C0°C to +70°C
-55
°C to +125°C
8-Pin SOIC
8-Pin Plastic Dip
8-Pin CERDIP
Package
Package
Package
ALD1110ESAL
ALD1110EPAL
ALD1110EDA
16-Pin SOIC
16-Pin Plastic Dip
16-Pin CERDIP
Package
Package
Package
ALD1108ESCL
ALD1108EPCL
ALD1108EDC
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)
PN1 (1)
DN1 (3)
GN1(2)
DN2 (6)
PN2 (8)
GN2 (7)
V- (4)
V+(5)
S12 (4)
ALD1110E
EPAD 1
EPAD 2
~
EPAD 1
EPAD 2
EPAD 3
EPAD 4
PN4 (8)
PN (1)
DN1 (3)
GN1(2)
DN2 (14)
PN2 (16)
GN2 (15)
PN3 (9)
DN3 (11)
GN3(10)
DN4 (6)
GN4 (7)
V- (5)
V+(13)
S12 (4)
S34 (12)
ALD1108E
~
GENERAL DESCRIPTION
ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically
Programmable Analog Device) N-channel MOSFETs with electrically
adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are
matched and adjusted (e-trimmed) at the factory resulting in quad/dual
MOSFETs that are highly matched in threshold voltages and other electrical
characteristics.
For a given input voltage, the threshold voltage of a
MOSFET device determines its drain on-current, resulting in an on-
resistance characteristic that can be precisely preset and then controlled by
the input voltage very accurately.
Using an ALD1108E/ALD1110E is simple and straight forward. The
MOSFETs function as n-channel MOSFETs, except that all the devices
have exceptional matching to each other in electrical characteristics. Since
these devices are on the same monolithic chip, they also exhibit excellent
tempco matching characteristics.
These MOSFET devices have very low input currents, and as a result a very
high input impedance (>1012 Ohm). The gate voltage from a control source
can drive many MOSFET inputs with practically no loading effects. Used in
precision current mirror or current multiplier applications, they can be used
to provide a current source over a 100nA to 3mA range, and with either a
positive, negative or zero tempco.
eEPAD
TM
®
N
A
B
L
E
D
E
ADVANCED
LINEAR
DEVICES, INC.
BENEFITS
Precision matched electrically after
packaging
Simple, elegant single-chip user option
to trim voltage/current values
Excellent device matching characteristics
with or without additional electrical trim
Remotely and electrically trim parameters
on circuits that are physically inaccessible
PIN CONFIGURATION
TOP VIEW
SCL, PCL, DC PACKAGES
TOP VIEW
SAL, PAL, DA PACKAGES
PN2
1
2
3
6
7
8
4
5
V+
GN1
DN1
PN1
S12, V-
DN2
GN2
v+
ALD1110E
EPAD 1
EPAD 2
PN2
1
2
3
14
15
16
4
13
V+
5
12
S34
PN3
6
7
8
10
11
GN1
DN1
PN1
S12
V-
GN4
PN4
DN4
9
GN3
DN3
DN2
GN2
v-
v+
ALD1108E
EPAD 1
EPAD 2
EPAD 4
EPAD 3


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