BD6563FV-LB

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Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

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TSZ02201-0717ABZ00030-1-2

© 2012 ROHM Co., Ltd. All rights reserved.

13.JUL.2012 Rev.002

www.rohm.com

TSZ22111・14・001

Datasheet

BD6563FV-LB

Small Signal IGBT/MOSFET Gate Driver Series

Three-Channel Small Signal

IGBT/MOSFET Gate Drivers

BD6563FV-LB

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General Description

BD6563FV-LB is 3-ch gate driver to drive gate of

IGBT/MOSFET from 5V input signals.

Output signals consist of each high side and low side

drive signals in order to make ON/OFF timing control

easy. 1 input signal generates 2 output signals which are

high side output and low side output signal for 1 channel

drive. High side output signal outputs "H" level and high

impedance and low side output signal outputs "L" signal

and high impedance.

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Features



Three-Channel Gate Drivers



Separated Turn ON and Turn OFF Output

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Applications



Low-side IGBT/MOSFET Gate Drive for DCDC

Converter



Low-side IGBT/MOSFET Gate Drive for Inverter

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Key Specifications



Output-side supply voltage(max.):

30V

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Input-side supply voltage:

3.0V to 5.5V

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Output peak current(≦1us):

±0.6A

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Input-Output delay time (at VDD=3.3V):380ns(Max.)

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Input-Output delay time (at VDD=5.0V):345ns(Max.)

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Operating temperature range:

-25℃ to +125℃

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Package

W(Typ.) x D(Typ.) x H(Max.)

SSOP-B16

5.00mm x 6.40mm x 1.35mm

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Typical Application Circuit

Figure 1. Typical Application Circuit

SSOP-B16

IN1, IN2, IN3

OUT_H1,

OUT_H2,

OUT_H3

OUT_L1,

OUT_L2,

OUT L3