10

Data Sheet

4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory

SST31LF041 / SST31LF041A / SST31LF043 / SST31LF043A

©2001 Silicon Storage Technology, Inc.

S71107-03-000

5/01

349

AC CHARACTERISTICS

TABLE

Symbol

Parameter

SST31LF041/043-70

SST31LF041A/043A-300

Units

Min

Max

Min

Max

Read Cycle Time

70

300

ns

Bank Enable Access Time

70

300

ns

Address Access Time

70

300

ns

Output Enable Access Time

35

150

ns

2. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

BES# to Active Output

0

0

ns

Output Enable to Active Output

0

0

ns

BES# to High-Z Output

25

30

ns

Output Disable to High-Z Output

25

30

ns

Output Hold from Address Change

0

10

ns

T9.8 349

Symbol

Parameter

SST31LF041/043-70

SST31LF041A/043A-300

Unit

Min

Max

Min

Max

Write Cycle Time

70

300

ns

Bank Enable to End-of-Write

60

230

ns

Address Valid to End-of-Write

60

230

ns

Address Set-up Time

0

0

ns

Write Pulse Width

60

200

ns

Write Recovery Time

0

0

ns

Data Set-up Time

30

150

ns

Data Hold from Write Time

0

0

ns

T10.5 349

Symbol

Parameter

SST31LF041/043-70

SST31LF041A/043A-300

Units

Min

Max

Min

Max

Read Cycle Time

70

300

ns

Bank Enable Access Time

70

300

ns

Address Access Time

70

300

ns

Output Enable Access Time

40

150

ns

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

BEF# Low to Active Output

0

0

ns

OE# Low to Active Output

0

0

ns

BEF# High to High-Z Output

15

60

ns

OE# High to High-Z Output

15

60

ns

TOH1

Output Hold from Address Change

0

0

ns

T11.5 349