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SST32HF164-70-4E-TBK Datasheet(PDF) 9 Page - Silicon Storage Technology, Inc |
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SST32HF164-70-4E-TBK Datasheet(HTML) 9 Page - Silicon Storage Technology, Inc |
9 / 28 page Data Sheet Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 9 ©2001 Silicon Storage Technology, Inc. S71171-05-000 8/01 520 TABLE 5: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V) Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input = VIL/VIH, at f=1/TRC Min, VDD=VDD Max, all DQs open Read Flash 20 mA OE#=VIL, WE#=VIH BEF#=VIL, BES#=VIH SRAM 20 mA BEF#=VIH, BES#=VIL Concurrent Operation 45 mA BEF#=VIH, BES#=VIL Write Flash 25 mA WE#=VIL BEF#=VIL, BES#=VIH, OE#=VIH SRAM 20 mA BEF#=VIH, BES#=VIL ISB Standby VDD Current 3.0V 3.3V 40 75 µA VDD = VDD Max, BEF#=BES#=VIHC ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 1 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VIH Input High Voltage 0.7VDD VVDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max VOL Flash Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOH Flash Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min VOLS SRAM Output Low Voltage 0.4 V IOL=1 mA, VDD=VDD Min VOHS SRAM Output High Voltage 2.2 V IOH=-500 µA, VDD=VDD Min T5.5 520 TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Program/Erase Operation 100 µs T6.0 520 TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 12 pF T7.0 520 TABLE 8: FLASH RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T8.1 520 |
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