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1812SMS-47NJLC Datasheet(PDF) 10 Page - Freescale Semiconductor, Inc |
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1812SMS-47NJLC Datasheet(HTML) 10 Page - Freescale Semiconductor, Inc |
10 / 11 page 10 RF Device Data Freescale Semiconductor MRF6VP11KHR6 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2008 • Initial Release of Data Sheet 1 Apr. 2008 • Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3. • Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 2 July 2008 • Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6 3 Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is measured separately, p. 5 • Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5 • Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 • Corrected Fig. 14, MTTF versus Junction Temperature – Pulsed, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 4 Dec. 2008 • Fig. 15, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit impedance as measured from drain to drain, balanced configuration”, p. 7 5 July 2009 • Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1 • Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, changed R1 Description from “1 KΩ, 1/4 W Axial Leaded Resistor” to “1 KΩ, 1/4 W Carbon Leaded Resistor” and “CMF601000R0FKEK” part number to “MCCFR0W4J0102A50”, Table 5, Test Circuit Component Designations and Values, p. 3 • Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect change in Drain Efficiency from 70% to 72%, p. 6 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation, Tools and Software, p. 20 6 Dec. 2009 • Device frequency range improved from 10--150 MHz to 1.8--150 MHz, p. 1 • Reporting of pulsed thermal data now shown using the ZθJC symbol, Table 2. Thermal Characteristics, p. 1 7 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 |
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