TYN20X-800T datasheet(1/12 Pages) NXP

Part #	TYN20X-800T

Description	SCR

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Manufacturer	NXP [NXP Semiconductors]

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TYN20X-800T

SCR

23 July 2012

Product data sheet

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1. Product profile

1.1 General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full

pack" plastic package intended for use in applications requiring very high inrush current

capability, high thermal cycling performance and high junction temperature capability

(Tj(max) = 150 °C).

1.2 Features and benefits

• High bidirectional blocking voltage capability

• High junction operating temperature capability

• High thermal cycling performance

• Isolated package

• Planar passivated for voltage ruggedness and reliability

• Very high current surge capability

1.3 Applications

• Capacitive Discharge Ignition (CDI)

• Crowbar protection

• Inrush protection

• Motor control

• Voltage regulation

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDRM

repetitive peak off-

state voltage

-

800

V

VRRM

repetitive peak reverse

voltage

-

800

V

half sine wave; Tj(init) = 25 °C;

tp = 10 ms; Fig. 4; Fig. 5

-

210

A

ITSM

non-repetitive peak on-

state current

half sine wave; Tj(init) = 25 °C;

tp = 8.3 ms

-

231

A

Tj

junction temperature

-

150

°C

IT(RMS)

RMS on-state current

half sine wave; Th ≤ 75 °C; Fig. 1; Fig. 2

-

20

A

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