PESD12VV1BL

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 1 — 3 April 2012

2 of 12

NXP Semiconductors

PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

3.

Ordering information

4.

Marking

5.

Limiting values

[1]

Device stressed with ten non-repetitive current pulses (8/20

s exponential decay waveform according to

IEC 61000-4-5 and IEC 61643-321).

[1]

Device stressed with ten non-repetitive ESD pulses.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PESD12VV1BL DFN1006-2

leadless ultra small plastic package; 2 terminals;

body 1.0

 0.6  0.5 mm

SOD882

Table 4.

Marking codes

Type number

Marking code

PESD12VV1BL

MW

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

rated peak pulse power

[1] -290

W

rated peak pulse current

[1] -7.8

A

junction temperature

-

150

C

ambient temperature

55

+150

C

storage temperature

65

+150

C

Table 6.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

electrostatic

discharge voltage

IEC 61000-4-2

(contact discharge)

[1] -30

kV

machine model

-

400

V

MIL-STD-883

(human body model)

-10

kV

Table 7.

ESD standards compliance

Standard

Conditions

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3B (human body model)

> 8 kV