GaN HEMT Pulsed Power Transistor

2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle

MAGX-002735-040L00

Production V1

26 March 12

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

1

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

Features

 GaN depletion mode HEMT microwave transistor

 Common source configuration

 Broadband Class AB operation

 Thermally enhanced Cu/Mo/Cu package

 RoHS Compliant

 +50V Typical Operation

Application

 Civilian and Military Pulsed Radar

Product Description

The MAGX-002735-040L00 is a gold metalized matched Gallium

Nitride (GaN) on Silicon Carbide RF power transistor optimized for

civilian and military radar pulsed applications between 2700 - 3500

MHz. Using state of the art wafer fabrication processes, these high

performance transistors provide high gain, efficiency, bandwidth,

ruggedness over a wide bandwidth for today’s demanding

application needs. The MAGX-002735-040L00 is constructed using

a thermally enhanced Cu/Mo/Cu flanged ceramic package which

provides excellent thermal performance. High breakdown voltages

allow for reliable and stable operation in extreme mismatched load

conditions unparalleled with older semiconductor technologies.

Typical RF Performance

Freq

(MHz)

Pin

(W

Peak)

Pout

(W

Peak)

Gain

(dB)

Id-Pk

(A)

Eff

(%)

2700

4

44

10.4

1.7

53

3100

4

46

10.6

1.7

54

3500

4

42

10.2

1.5

55

2900

4

44

10.5

1.6

56

2800

4

45

10.5

1.7

53

3000

4

43

10.3

1.7

51

3400

4

43

10.3

1.5

55

3300

4

47

10.7

1.7

57

3200

4

47

10.7

1.7

54

Typical RF performance measured in M/A-COM RF test fixture.

Devices tested in common source Class-AB configuration as

follows: Vdd=50V, Idq=250mA (pulsed), F=2.7—3.5 GHz,

Pulse=300us, Duty=10%.

Ordering Information

MAGX-002735-040L00

40W GaN Power Transistor

MAGX-002735-SB0PPR Evaluation Fixture